AUIRF1405ZS Datasheet, International Rectifier

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AUIRF1405ZS Features and benefits

l l l l l AUIRF1405ZS AUIRF1405ZL HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID D l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature F.

AUIRF1405ZS Application

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon a.

AUIRF1405ZS Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperatu.

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